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| BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607C (Z) 4th. Edition May 1998 Features * * * * Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage. * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note: 1. Marking is "EW-". 2. BB305M is individual type number of HITACHI BBFET. BB305M Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 -0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature 10 25 150 150 -55 to +150 V mA mW C C Unit V V 2 BB305M Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS 12 +10 10 -- -- 0.4 0.4 2.3 1.1 -- 10 -- 23 -- 24 -- -- -- Typ -- -- -- -- -- -- -- 2.8 1.5 Max -- -- -- +100 100 1.0 1.0 3.5 1.9 Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test Conditions I D = 200A, VG1S = VG2S = 0 I G1 = +10A, VG2S = VDS = 0 I G2 = 10A, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = 9V, VG1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100A VDS = 5V, VG1S = 5V, ID = 100A VDS = 5V, VG1 = 5V VG2S =4V, RG = 82k f = 1MHz VDS = 5V, VG1 = 5V, VG2S = 4V RG = 82k VDS = 9V, VG1 = 9V, VG2S =6V RG = 220k VDS = 5V, VG1 = 5V, VG2S =4V RG =82k, f = 1kHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 220k, f = 1kHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 82k, f = 200MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 220k, f = 200MHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 82k, f = 200MHz VDS = 9V, VG1 = 9V, VG2S =6V RG = 220k, f = 200MHz Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Input capacitance Output capacitance c iss c oss Reverse transfer capacitance c rss Drain current I D(op) 1 I D(op) 2 Forward transfer admittance |yfs|1 |yfs|2 Power gain PG1 PG2 Noise figure NF1 NF2 0.017 0.04 15 13 28 28 28 28 1.4 1.4 20 -- -- -- -- -- 1.9 -- 3 BB305M Main Characteristics Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG) D(op) VG2 Gate 2 Gate 1 RG VG1 A ID Drain Source Power Gain, Noise Figure Test Circuit VT 1000p VG2 1000p VT 1000p 47k Input(50 ) L1 1000p 36p 1000p 47k BBFET L2 1000p 47k Output(50 ) 10p max 1000p 1SV70 RG 82k RFC 1SV70 1000p V D = VG1 Unit @Resistance @( ) @ @ Capacitance @(F) L1 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : 1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : 1mm Enameled Copper Wire,Inside dia 5mm, 2Turns . 4 BB305M Maximum Channel Power Dissipation Curve Pch (mW) Typical Output Characteristics 25 I D (mA) 200 150 20 Channel Power Dissipation 15 100 10 50 5 RG kW 68 W k 82 k W 0 10 k W 20 W 1k 150 k W 180 0 kW = 22 Drain Current 0 50 100 150 Ta (C) 200 0 Ambient Temperature 1 2 3 Drain to Source Voltage 4 5 V DS (V) Drain Current vs. Gate2 to Source Voltage 25 V DS = V G1 = 5 V I D (mA) Drain Current vs. Gate1 Voltage 20 W I D (mA) 47 k 20 V DS = 5 V R G = 68 k W 16 56 k W 68 k W 15 Drain Current Drain Current 10 82 k W 100 k W 120 k W 150 k W 180 k W 12 3V 8 4V 5 2V 4 V G2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) 5 W R G = 220 k 0 0.8 1.6 2.4 Gate2 to Source Voltage 4.0 VG2S (V) 3.2 0 56 47 kW kW V G2S = 4 V @ V G1 = VDS A@ 5 BB305M Drain Current vs. Gate1 Voltege 20 20 V DS = 5 V R G = 82 k W Drain Current vs. Gate1 Voltege V DS = 5 V R G = 100 k W I D (mA) 16 I D (mA) Drain Current 16 12 3V 4V 12 4V 8 3V 2V V G2S = 1 V Drain Current 8 2V 4 V G2S = 1 V 1 2 3 4 Gate1 Voltage VG1 (V) 5 4 0 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 Forward Transfer Admittance |y fs | (mS) Forward Transfer Admittance vs. Gate1 Voltage 30 Forward Transfer Admittance vs. Gate1 Voltage Forward Transfer Admittance |y fs | (mS) V DS = 5 V R G = 68 k W 24 f = 1 kHz 30 V DS = 5 V R G = 82 k W 24 f = 1 kHz 18 4V 3V 2V 4V 3V 18 2V 12 12 6 V G2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 6 V G2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 6 BB305M Forward Transfer Admittance vs. Gate1 Voltage Power Gain vs. Gate Resistance 40 Forward Transfer Admittance |y fs | (mS) 30 V DS = 5 V R G = 100 k W f = 1 kHz 4V 3V 18 2V Power Gain PG (dB) 24 35 30 25 20 15 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 20 50 100 200 500 1000 Gate Resistance R G (k W ) 12 6 V G2S = 1 V 0 1 2 3 4 Gate1 Voltage VG1 (V) 5 10 10 Noise Figure vs. Gate Resistance 4 40 V DS = 5 V V G1 = 5 V V G2S = 4 V f = 200 MHz 35 Power Gain vs. Drain Current Noise Figure NF (dB) 3 Power Gain PG (dB) 30 25 20 15 V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz 5 10 15 20 25 30 2 1 0 10 20 50 100 200 500 1000 Gate Resistance R G (k W) 10 0 Drain Current ID (mA) 7 BB305M Noise Figure vs. Drain Current 4 Noise Figure NF (dB) Drain Current vs. Gate Resistance 30 3 Drain Current ID V DS = 5 V V G1 = 5 V V G2S = 4 V R G = variable f = 200 MHz (mA) 25 20 15 10 5 0 10 V DS = 5 V V G1 = 5 V V G2S = 4 V 20 50 100 200 500 1000 2 1 0 5 10 15 20 25 30 Drain Current ID (mA) Gate Resistance R G (k W ) Gain Reduction vs. Gate2 to Source Voltage 60 50 40 30 20 10 Input Capacitance Ciss (pF) Gain Reduction GR (dB) Input Capacitance vs. Gate2 to Source Voltage 6 5 4 3 2 1 0 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) V DS = 5 V V G1 = 5 V R G = 82 k W f = 1 MHz V DS = 5 V V G1 = 5 V V G2S = 4 V R G = 82 k W f = 200 MHz 0 1 2 3 4 5 Gate2 to Source Voltage VG2S (V) 8 BB305M S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 180 0 150 30 1 1.5 2 S21 Parameter vs. Frequency 90 120 Scale: 1 / div. 60 -150 -30 Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k W 50 ` 1000 MHz (50 MHz step) Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k W 50 ` 1000 MHz (50 MHz step) S12 Parameter vs. Frequency 90 120 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.002 / div. 60 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 -3 Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k W 50 ` 1000 MHz (50 MHz step) Test Condition : V DS = 5 V , V G1 = 5 V V G2S = 4 V , R G = 82 k W 50 ` 1000 MHz (50 MHz step) 9 BB305M Sparameter (VDS = VG1 = 5V, VG2S = 4V, RG = 82k, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.991 0.991 0.982 0.975 0.972 0.956 0.942 0.928 0.920 0.906 0.894 0.880 0.868 0.854 0.842 0.835 0.820 0.802 0.801 0.789 ANG -4.8 -9.9 -15.4 -20.7 -25.6 -30.6 -35.5 -40.1 -44.9 -49.2 -53.6 -57.8 -62.1 -66.2 -70.3 -73.9 -77.7 -81.5 -84.7 -87.9 S21 MAG 2.69 2.68 2.66 2.62 2.60 2.54 2.47 2.42 2.38 2.32 2.25 2.18 2.12 2.06 2.00 1.94 1.89 1.83 1.78 1.73 ANG 174.9 169.3 163.4 157.5 152.0 146.3 140.9 135.7 130.5 125.7 120.8 116.2 111.5 106.8 102.5 98.4 94.0 89.6 85.6 82.1 S12 MAG 0.00090 0.00153 0.00243 0.00293 0.00370 0.00444 0.00478 0.00535 0.00551 0.00549 0.00584 0.00542 0.00562 0.00509 0.00465 0.00427 0.00416 0.00289 0.00288 0.00241 ANG 91.4 90.5 73.8 74.9 70.1 69.0 63.7 64.8 56.8 58.6 54.4 53.3 49.5 48.6 49.7 51.6 53.3 57.9 72.9 78.9 S22 MAG 0.991 0.992 0.991 0.989 0.985 0.981 0.977 0.973 0.967 0.962 0.957 0.952 0.944 0.939 0.933 0.927 0.921 0.915 0.909 0.904 ANG -2.2 -4.8 -7.5 -9.9 -12.6 -15.0 -17.3 -19.7 -22.0 -24.5 -26.9 -29.2 -31.5 -33.8 -36.1 -38.3 -40.5 -42.7 -44.9 -47.1 10 BB305M Package Dimensions Unit: mm 2.8 - 0.1 + 0.3 0.65 - 0.3 + 0.1 1.9 0.95 0.95 0.4 - 0.05 + 0.1 0.4 - 0.05 + 0.1 0.16 + 0.1 - 0.06 3 2 + 0.2 2.8 - 0.6 4 0.4 - 0.05 0.95 1.8 + 0.1 1 0.6 - 0.05 0.85 0.65 - 0.3 + 0.1 + 0.1 0.3 1.1 - 0.1 + 0.2 1.5 0 ~ 0.1 Hitachi Code EIAJ JEDEC MPAK-4 SC-61AA -- 11 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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